量子点作为一种理想的发光材料，一直以来引起了科学家和工业界的广泛关注，推动了生物成像、照明、显示等领域的发展。随着生态环境保护的意识逐渐增强，磷化铟量子点（InP QDs）作为镉基量子点的最好替代者之一，受到了广泛的关注：一方面，InP QDs具有与镉基量子点相媲美的发光和光电性质；另一方面，其发光光谱范围可覆盖整个可见光区，且合成工艺与镉基量子点共通。然而，因为InP QDs与传统镉基量子点相比，在元素价态、核壳晶格匹配性、反应动力学过程等方面具有特殊性，其合成化学的发展还不成熟，限制了其光电应用的研究进程。本文结合量子点显示的发展现状和未来需求，针对InP QDs体系进行了综述，通过分析其研究现状，分析其发展问题和挑战，并对其进行了展望，期望为量子点及其电致发光器件的进一步探索研究提供一些启示和帮助，推动无镉、低毒、高色纯度量子点体系的发展。

为解决原子力显微镜（Atomic Force Microscope， AFM）系统更换探针后光路调整复杂耗时、精度不足的问题，本文首次提出通过精密控制探针与探针夹装配位置来实现更换的探针相对AFM系统原光路位置的一致，进而实现免去AFM系统换针后调整光路步骤。该系统的光路一致性组件采用光束偏转法对探针位置与偏转进行放大与监测，并使用高精度位移与角度调节平台进行探针相对于探针夹的方位调整。通过实物搭建对探针一致性效果进行了验证，并对紫外光（Ultraviolet， UV）胶水固化过程导致探针位置偏移影响；探针不同偏移量时产生的探测器噪音对AFM系统成像质量影响进行了系统分析。实验结果表明：经由该系统装配的探针平均位置精度接近1.1 µm；并且在AFM系统中更换一致性探针仅需8 s。该系统实现了高精度且质量稳定的探针一致性装配，极大地简化了AFM系统重新校准光路的操作步骤，其与自动换针装置配合可有效提升工业计量型AFM的操作与测量性能。

Circular dichroism (CD) is extensively used in various material systems for applications including biological detection, enantioselective catalysis, and chiral separation. This paper introduces a chiral absorptive metasurface that exhibits a circular polarization-selective effect in dual bands—positive and negative CD peaks at short wavelengths and long wavelengths, respectively. Significantly, we uncover that this phenomenon extends beyond the far-field optical response, as it is also observed in the photothermal effect and the dynamics of thermally induced fluid motion. By carefully engineering the metasurface design, we achieve two distinct CD signals with high g factors (∼1) at the wavelengths of 877 nm and 1045 nm, respectively. The findings presented in this study advance our comprehension of CD and offer promising prospects for enhancing chiral light–matter interactions in the domains of nanophotonics and optofluidics.

Broadband absorbers generally consist of plasmonic cavities coupled to metallic resonators separated by a dielectric film, and they are vertically stacking configurations. In this work, we propose an ultra-broadband nanowire metamaterial absorber composed of an array of vertically aligned dielectric nanowires with coaxial metallic rings. The absorber shows strong absorption from 0.2 to 7 μm with an average absorption larger than 91% due to the excitation of gap surface plasmon polariton modes in Fabry–Perot-like resonators. Moreover, a refractory dielectric cladding can be added to improve the thermal stability of the absorber, showing a negligible impact on its absorption performance. The proposed absorber may find potential applications in solar energy harvesting, infrared imaging and spectroscopy, and optoelectronic devices.

The integration of a single III-V semiconductor quantum dot with a plasmonic nanoantenna as a means toward efficient single-photon sources (SPEs) is limited due to its weak, wide-angle emission, and low emission rate. These limitations can be overcome by designing a unique linear array of plasmonic antenna structures coupled to nanowire-based quantum dot (NWQD) emitters. A linear array of a coupled device composed of multiple plasmonic antennas at an optimum distance from the quantum dot emitter can be designed to enhance the directionality and the spontaneous emission rate of an integrated single-photon emitter. Finite element modeling has been used to design these compact structures with high quantum efficiencies and directionality of single-photon emission while retaining the advantages of NWQDs. The Purcell enhancement factor of these structures approaches 66.1 and 145.8, respectively. Compared to a single NWQD of the same diameter, the fluorescence was enhanced by 1054 and 2916 times. The predicted collection efficiencies approach 85% (numerical aperture, NA=0.5) and 80% (NA=0.5), respectively. Unlike single-photon emitters based on bulky conventional optics, this is a unique nanophotonic single-emission photon source based on a line-array configuration that uses a surface plasmon-enhanced design with minimum dissipation. The designs presented in this work will facilitate the development of SPEs with potential integration with semiconductor optoelectronics.

The development of high-performance InP-based quantum dot light-emitting diodes (QLEDs) has become the current trend in ecofriendly display and lighting technology. However, compared with Cd-based QLEDs that have already been devoted to industry, the efficiency and stability of InP-based QLEDs still face great challenges. In this work, colloidal NiOx and Mg-doped NiOx nanocrystals were used to prepare a bilayered hole injection layer (HIL) to replace the classical polystyrene sulfonate (PEDOT:PSS) HIL to construct high-performance InP-based QLEDs. Compared with QLEDs with a single HIL of PEDOT:PSS, the bilayered HIL enables the external quantum efficiencies of the QLEDs to increase from 7.6% to 11.2%, and the T95 lifetime (time that the device brightness decreases to 95% of its initial value) under a high brightness of 1000cdm-2 to prolong about 7 times. The improved performance of QLEDs is attributed to the bilayered HIL reducing the mismatched potential barrier of hole injection, narrows the potential barrier difference of indium tin oxide (ITO)/hole transport layer interface to promote carrier balance injection, and realizes high-efficiency radiative recombination. The experimental results indicate that the use of bilayered HILs with p-type NiOx might be an efficient method for fabricating high-performance InP-based QLEDs.